? 2003 ixys all rights reserved features ? international standard packages ? minibloc, with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 300 v v gh(th) v ds = v gs , i d = 8 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 22 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 300 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 130 a i l(rms) terminal (current limit) 100 a i dm t c = 25 c, pulse width limited by t jm 520 a i ar t c = 25 c 100 a e ar t c = 25 c85mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g hiperfet tm power mosfets single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr ds98531f(01/03) d s g s s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source ixfn 130n30 v dss = 300 v i d25 = 130 a r ds(on) = 22 m ? ? ? ? ? t rr < 250 ns
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfn 130n30 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60a, pulse test 70 92 s c iss 14500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 2650 pf c rss 610 pf t d(on) 45 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 75 ns t d(off) r g = 1 ? (external), 130 n s t f 31 ns q g(on) 380 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 95 nc q gd 180 nc r thjc 0.18 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 130 a i sm repetitive; 520 a pulse width limited by t jm v sd i f = 100a, v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 30a, -di/dt = 100 a/ s, v r = 100 v 250 n s q rm 0.8 c i rm 8a minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
? 2003 ixys all rights reserved v ds - volts 0 4 8 12 16 20 i d - amperes 0 40 80 120 160 200 v gs - volts 23456 i d - amperes 0 30 60 90 120 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 25 50 75 100 125 150 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i d =60a i d - amperes 0 50 100 150 200 250 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts 0481216 i d - amperes 0 50 100 150 200 250 5v v gs = 10v v gs =10v 9v 8v 7v v gs =10v t j =25 o c 6v 6v 5v t j = 25 o c i d =120a t j = 25 o c t j = 125 o c v gs =10v 9v 8v 7v t j = 125 o c t j =125 o c figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 5. drain current vs. case temperature figure 6. admittance curves figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 4. r ds(on) normalized to 0.5 i d25 value vs. t j ixfn 130n30
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.010 0.100 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 0 3000 6000 9000 12000 15000 18000 v sd - volts 0.3 0.6 0.9 1.2 1.5 1.8 i d - amperes 0 40 80 120 160 200 gate charge - nc 0 100 200 300 400 500 v gs - volts 0 2 4 6 8 10 12 vds=300v i d =30a i g =10ma c rss c oss c iss v ds = 150v i d = 65a i g = 10ma f = 100khz t j = 25 o c t j = 125 o c single pulse figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance ixfn 130n30
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